Frictional behavior and topographical changes of material surfaces with applications in the microelectronics industry were experimentally observed. This work was performed to unveil trends in tribological characteristics of porous polyurethane material separately against copper and silicon dioxide materials typically found in integrated circuit (IC) polishing manufacturing processes. A linear reciprocating tribometer was utilized to translate the loaded contact of the polymer and contacting materials in the presence of a colloidal silica slurry. Contact forces were monitored throughout the experiments while surface topography of contacting surfaces was quantified using profilometry. Trials of polishing experiments were performed through a range of normal pressures and velocities to identify trends of interest, which are important in polishing. Coefficients of friction (COFs) between the polymer and contacting materials showed a decreasing trend with increasing polishing time and distance traveled. The copper and polymer material contacts were found to have a lower COF than that for the silicon dioxide and polymer contacts. Surface roughness of the polymer showed a general decreasing trend with increasing polishing time. This trend indicates a potential correlation between polymer surface roughness and the COF between the polymer and contacting materials. Evolution of the surface roughness of the materials differed depending on the direction along which topography was measured. An uncertainty analysis of the quantified parameters was conducted to provide knowledge in the confidence of the experimental results. Tribological behavior of the porous polyurethane and copper and silicon dioxide contacts is gathered from this experimental work for more complete characterization of the material.

References

References
1.
Ponte
,
D. C.
, and
Meyer
,
D. M. L.
,
2015
, “
Energy Dissipation and Constitutive Modeling for a Mechanistic Description of Pad Scratching in Chemical-Mechanical Planarization
,”
J. Mater. Sci.: Mater. Electron.
,
27
(
2
), pp.
1745
1757
.
2.
Kim
,
S.
,
Saka
,
N.
, and
Chun
,
J.
,
2014
, “
The Role of Pad Topography in Chemical-Mechanical Polishing
,”
IEEE Trans. Semicond. Manuf.
,
27
(
3
), pp.
431
442
.
3.
Kim
,
S.
,
Saka
,
N.
, and
Chun
,
J.
,
2014
, “
Pad Scratching in Chemical-Mechanical Polishing: The Effects of Mechanical and Tribological Properties
,”
ECS J. Solid State Sci. Technol.
,
3
(
5
), pp.
P169
P178
.
4.
Tichy
,
J.
,
Levert
,
J. A.
,
Shan
,
L.
, and
Danyluk
,
S.
,
1999
, “
Contact Mechanics and Lubrication Hydrodynamics of Chemical Mechanical Polishing
,”
J. Electrochem. Soc.
,
146
(
4
), pp.
1523
1528
.
5.
Li
,
W.
,
Shin
,
D. W.
,
Tomozawa
,
M.
, and
Murarka
,
S. P.
,
1995
, “
Effect of the Polishing Pad Treatments on the Chemical-Mechanical Polishing of SiO2 Films
,”
Thin Solid Films
,
270
(
1
), pp.
601
606
.
6.
Castillo-Mejia
,
D.
,
Gold
,
S.
,
Burrows
,
V.
, and
Beaudoin
,
S.
,
2003
, “
The Effect of Interactions Between Water and Polishing Pads on Chemical Mechanical Polishing Removal Rates
,”
J. Electrochem. Soc.
,
150
(
2
), pp.
G76
G82
.
7.
Schmitz
,
T. L.
,
Action
,
J. E.
,
Ziegert
,
J. C.
, and
Sawyer
,
W. G.
,
2005
, “
The Difficulty of Measuring Low Friction: Uncertainty Analysis for Friction Coefficient Measurements
,”
ASME J. Tribol.
,
127
(
3
), pp.
673
678
.
8.
Schmitz
,
T. L.
,
Action
,
J. E.
,
Burris
,
D. L.
,
Ziegert
,
J. C.
, and
Sawyer
,
W. G.
,
2004
, “
Wear-Rate Uncertainty Analysis
,”
ASME J. Tribol.
,
126
(
4
), pp.
802
808
.
9.
Leonard
, I
. E.
,
Lewis
,
J. E.
,
Liu
,
A. C.
, and
Tokarsky
,
G. W.
,
2014
,
Classical Geometry. Euclidean, Transformational, Inversive, and Projective
,
Wiley
,
Hoboken, NJ
, p.
152
, Chap. 5.3.
10.
Saka
,
N.
,
2001
, “
Mechanisms of the Chemical Mechanical Polishing (CMP) Process in Integrated Circuit Fabrication
,”
CIRP Ann.
,
50
(
1
), pp.
233
238
.
11.
Taylor
,
B. N.
, and
Kuyatt
,
C. E.
,
1994
, “
Guidelines for Evaluating and Expressing the Uncertainty of NIST Measurement Results
,” National Institute of Standards and Technology, Gaithersburg, MD, NIST Technical Note 1297.
12.
Schmitz
,
T. L.
,
Evans
,
C. J.
,
Davies
,
A.
, and
Estler
,
W. T.
,
2002
, “
Displacement Uncertainty in Interferometric Radius Measurements
,”
CIRP Ann. Manuf. Technol.
,
51
(
1
), pp.
451
454
.
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