The authors observed that the strength of triboemission, for diamond-Si and diamond-Ge pairs, decreased as contact progressed over the same wear track. Nakayama and Fujimoto (1) observed similar tendencies although accompanied by occasional high strength emission peaks. Nakayama and Fujimoto proposed that the weak signals are due to their samples being mono-crystalline silicon, whereas they suggested that the strong signals are probably due to contamination of samples by formation of oxides during pre-experimental surface preparation in air. This author suggests that the observed triboemission behavior in the present work and the work of Nakayama is a consequence of a pressure-induced metallization of silicon. Repeated passing of the diamond stylus on the same wear track, under suitable conditions, would induce metallization (2). Such a notion is supported by the observation of plastically extruded silicon plastically extruded silicon (PES)...

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