This study seeks to explain removal rate trends and scatter in thermal silicon dioxide and PECVD tetraethoxysilane-sourced silicon dioxide (PE-TEOS) CMP using an augmented version of the Langmuir-Hinshelwood mechanism. The proposed model combines the chemical and mechanical facets of interlevel dielectric (ILD) CMP and hypothesizes that the chemical reaction temperature is determined by transient flash heating. The agreement between the model and data suggests that the main source of apparent scatter in removal rate data plotted as rate versus pressure times velocity is competition between mechanical and thermochemical mechanisms. A method of visualizing removal rate data is described that shows, apart from any particular interpretative theory, that a smooth and easily interpretable surface underlies the apparent scatter.
Revisiting the Removal Rate Model for Oxide CMP
Contributed by the Tribology Division for publication in the ASME JOURNAL OF TRIBOLOGY. Manuscript received by the Tribology Division May 14, 2004; revised manuscript received January 3, 2005. Review conducted by: L. Chang.
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Sorooshian, J., Borucki, L., Stein , D., Timon , R., Hetherington, D., and Philipossian, A. (June 13, 2005). "Revisiting the Removal Rate Model for Oxide CMP ." ASME. J. Tribol. July 2005; 127(3): 639–651. https://doi.org/10.1115/1.1866168
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