This paper reports and compares Raman and infrared thermometry measurements along the legs and on the shuttle of a SOI (silicon on insulator) bent-beam thermal microactuator. Raman thermometry offers micron spatial resolution and measurement uncertainties of ±10 K. Typical data collection times are a minute per location leading to measurement times on the order of hours for a complete temperature profile. Infrared thermometry obtains a full-field measurement so the data collection time is on the order of a minute. The spatial resolution is determined by the pixel size, 25 μm by 25 μm for the system used, and infrared thermometry also has uncertainties of ±10 K after calibration with a nonpackaged sample. The Raman and infrared measured temperatures agreed both qualitatively and quantitatively. For example, when the thermal microactuator was operated at 7 V, the peak temperature on an interior leg is 437 K ± 10 K and 433 K ± 10 K from Raman and infrared thermometry, respectively. The two techniques are complementary for microsystems characterization when infrared imaging obtains a full-field temperature measurement and Raman thermometry interrogates regions for which higher spatial resolution is required.
Raman and Infrared Thermometry for Microsystems
Manuscript received September 22, 2011; final manuscript received October 5, 2012; published online July 15, 2013. Assoc. Editor: Srinath V. Ekkad.
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Phinney, L. M., Lu, W., and Serrano, J. R. (July 15, 2013). "Raman and Infrared Thermometry for Microsystems." ASME. J. Thermal Sci. Eng. Appl. September 2013; 5(3): 031011. https://doi.org/10.1115/1.4023395
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