We investigate the repair of interruptions in the back contact (P1) scribing line between two Mo back electrodes by thermally induced fractures. The fractures occur during Cu(In,Ga)Se2 (CIGS) absorber co-evaporation, as it is applied in CIGS thin-film module manufacturing and can effectively repair line interruptions of up to about 70 μm. Additionally, we present that a thermal treatment after P1 laser scribing and before CIGS co-evaporation can repair even interruptions of up to 1 mm. The fractures which are required for insulation are only of approximately 4 μm width which indicates the potential for further reduction of the interconnection width in CIGS modules and therefore improvement of the electrical module efficiency.

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