In this work, we report the efficiency enhancement of a GaAs solar cell by using a luminescent down-shifting (LDS) layer consisting of (CdSe)ZnS quantum dots (QDs). The calculated conversion efficiency shows strong dependence on the luminescence quantum efficiency (LQE) and concentration of QDs in the LDS layer as well as the difference in external quantum efficiency (EQE) of the solar cell in the absorption and emission regions of the QD. Although the irradiance of the modified spectrum by the LDS layer was reduced with increases in QD concentration, the emission range of QDs in the spectrum was intensified. So the optimum parameters need to be calculated carefully. When we measured the GaAs solar cell with the LDS layer, it showed increased current density and consequently improved efficiency. The highest performance difference between the GaAs solar cell efficiencies with and without the LDS layer was over 2.8%, although a crystalline silicon solar cell below the LDS layer showed negative change in efficiency owing to its small EQE difference.
Efficiency Enhancement of GaAs Solar Cell Using Luminescent Down-Shifting Layer Consisting of (CdSe)ZnS Quantum Dots With Calculation and Experiment
Contributed by the Solar Energy Division of ASME for publication in the JOURNAL OF SOLAR ENERGY ENGINEERING: INCLUDING WIND ENERGY AND BUILDING ENERGY CONSERVATION. Manuscript received January 21, 2014; final manuscript received September 10, 2014; published online October 23, 2014. Assoc. Editor: Santiago Silvestre.
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Ahn, Y., Kim, J., Shin, S., Ganorkar, S., Kim, Y., Kim, Y., and Kim, S. (October 23, 2014). "Efficiency Enhancement of GaAs Solar Cell Using Luminescent Down-Shifting Layer Consisting of (CdSe)ZnS Quantum Dots With Calculation and Experiment." ASME. J. Sol. Energy Eng. April 2015; 137(2): 021011. https://doi.org/10.1115/1.4028700
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