Anisotype heterojunctions of p-GaAs/n-Cd1-xZnxS1-yTey have been fabricated by preparing n-type Cd1-xZnxS1-yTey thin films onto p-GaAs single crystal wafers using an electrochemical deposition method. The voltammetric behavior of the Cd1-xZnxS1-yTey thin films on GaAs substrates from aqueous solutions was studied. Electrical and photoelectrical properties of heterojunctions were studied depending on the Cd1-xZnxS1-yTey films composition (x = 0.1 ÷ 0.8; y = 0.2; 0.4; 0.9) and heat treatment (HT) regime in argon atmosphere (100–450 °С during 3–16 min). Under AM1.5 conditions, the open-circuit voltage, short-circuit current, fill factor, and efficiency of our best cell, was Voc = 584 mV, Jsc = 14.54 mA/cm2, FF = 0.6, and η = 6.7%, respectively.
Preparation and Investigation of p-GaAs/n-Cd1-xZnxS1-yTey Heterojunctions Deposited by Electrochemical Deposition
Contributed by the Solar Energy Division of ASME for publication in the JOURNAL OF SOLAR ENERGY ENGINEERING: Including Wind Energy and Building Energy Conservation. Manuscript received October 2, 2013; final manuscript received April 25, 2014; published online May 29, 2014. Assoc. Editor: Santiago Silvestre.
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Mamedov, H. M., Konya, Z., Muradov, M. B., Kukovecz, A., Kordas, K., Hashim, D. P., and Mamedov, V. U. (May 29, 2014). "Preparation and Investigation of p-GaAs/n-Cd1-xZnxS1-yTey Heterojunctions Deposited by Electrochemical Deposition." ASME. J. Sol. Energy Eng. November 2014; 136(4): 044503. https://doi.org/10.1115/1.4027694
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