This paper analyzes the ideality factor of amorphous silicon (a-Si:H) solar cells as a function of both the thickness of the intrinsic layer and the applied voltage to the cells. The ideality factor in this work is extracted from the current/voltage characteristic that is calculated by solving the continuity and transport equations and taking into account the contributions of diffusion and drift currents for minority and majority carriers and, especially, the nonequality of mobilities and lifetimes of electrons and holes in a-Si:H solar cells.

1.
Crandall
,
R. S.
, 1982, “
Transport in Hydrogenated Amorphous Silicon p-i-n Solar Cells
,”
J. Appl. Phys.
0021-8979,
53
, pp.
3350
3352
.
2.
Okamoto
,
H.
,
Kida
,
H.
,
Nomomura
,
S.
,
Fukumoto
,
K.
, and
Hamakawa
,
Y.
, 1983, “
Mobility-Lifetime Product and Interface Property in Amorphous Silicon Solar Cells
,”
J. Appl. Phys.
0021-8979,
54
, pp.
3236
3243
.
3.
Taretto
,
K.
,
Rau
,
U.
, and
Werner
,
J. H.
, 2003, “
Closed-Form Expression for the Current/Voltage Characteristics of pin Solar Cells
,”
Appl. Phys. A: Mater. Sci. Process.
0947-8396,
77
, pp.
865
871
.
4.
Misiakos
,
K.
, and
Lindholm
,
F. A.
, 1988, “
Analytical and Numerical Modeling of Amorphous Silicon p-i-n Solar Cells
,”
J. Appl. Phys.
0021-8979,
64
, pp.
383
393
.
5.
Taretto
,
K.
, and
Rau
,
U.
, 2004, “
Modeling Extremely Thin Absorber Solar Cells for Optimized Design
,”
Prog. Photovoltaics
1062-7995,
12
, pp.
573
591
.
6.
Crandall
,
R. S.
, 1983, “
Modeling of Thin Film Solar Cells: Uniform Field Approximation
,”
J. Appl. Phys.
0021-8979,
54
, pp.
7176
7186
.
7.
Moore
,
A. R.
, 1977, “
Electron and Hole Drift Mobility in Amorphous Silicon
,”
Appl. Phys. Lett.
0003-6951,
31
, pp.
762
764
.
8.
Fahrner
,
W. R.
,
Grabosch
,
G.
,
Borchert
,
D.
,
Chan
,
Y.
,
Kwong
,
S.
, and
Man
,
K.
, 1999, “
Temperature Dependency of the Intrinsic Carrier Density of Hydrogenated Amorphous Silicon in MOS Structures
,”
J. Solid State Electrochem.
1432-8488,
3
, pp.
245
250
.
9.
Hack
,
M.
, and
Shur
,
M.
, 1985, “
Physics of Amorphous Silicon Alloy p-i-n Solar Cells
,”
J. Appl. Phys.
0021-8979,
58
, pp.
997
1020
.
10.
Sze
,
S. M.
, 1981,
Physics of Semiconductor Devices
,
2nd ed.
,
Wiley
,
New York
, p.
75
.
11.
Fahrenbruch
,
A. L.
, and
Bube
,
R. H.
, 1983,
Fundamentals of Solar Cells
,
Academic
,
New York
, p.
73
.
12.
Dimitrijev
,
S.
, 2000,
Understanding Semiconductor Devices
,
Oxford University Press
,
New York
, p.
32
.
13.
Al Tarabsheh
,
A.
, 2007, “
Amorphous Silicon Based Solar Cells
,” Ph.D. thesis, Stuttgart Universität.
14.
Asensi
,
J. M.
,
Merten
,
J.
,
Voz
,
C.
, and
Andreu
,
J.
, 1999, “
Analysis of the Role of Mobility-Lifetime Products in the Performance of Amorphous Silicon p-i-n Solar Cells
,”
J. Appl. Phys.
0021-8979,
85
, pp.
2939
2951
.
15.
Bruno
,
G.
,
Capezzuto
,
P.
, and
Madan
,
A.
, 1995,
Plasma Deposition of Amorphous Silicon-Based Materials
,
Academic
,
California
, p.
177
.
You do not currently have access to this content.