A new method is proposed for preparing silicon P-N junctions. The first consists in fixing a transparent plastic film coated with a thin layer of a conventional dopant on the surface of the wafer, then illuminating this sandwich with a higher power Q switched laser. Two successive pulses are used, the first being able to transfer the dopant from the film to the silicon surface, the second to induce a liquid phase diffusion incorporating the dopant into the silicon lattice. Solar cells have been prepared by using this process, implying several attractive features.

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