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Y.-S. Chan
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Proceedings Papers
Proc. ASME. IMECE2010, Volume 4: Electronics and Photonics, 137-144, November 12–18, 2010
Paper No: IMECE2010-40975
Abstract
A low-cost (with bare chips) and high (electrical, thermal, and mechanical) performance 3D IC integration system-in-package (SiP) is designed and described. This system consists of a silicon interposer with through-silicon vias (TSV) [1–24] and redistribution layers (RDL), which carries the high-power flip chips with microbumps on its top surface and the low-power chips at its bottom surface. TSVs in the high- and low-power chips are optional but should be avoided. The backside of the high-power chips is attached to a heat spreader with or w/o a heat sink. This 3D IC integration system is supported (packaged) by a simple conventional organic substrate. The heat spreader (with or w/o heat sink) and the substrate are connected by a ring stiffener, which provides adequate standoff for the 3D IC integration system. This novel structural design offers potential solutions for high-power, high-performance, high pin-count, ultra fine-pitch, small real-estate, and low-cost applications. Thermal management and reliability of the proposed systems are demonstrated by simulations based on heat-transfer theory and time and temperature dependent creep theory.
Proceedings Papers
Proc. ASME. InterPACK2009, ASME 2009 InterPACK Conference, Volume 1, 803-807, July 19–23, 2009
Paper No: InterPACK2009-89260
Abstract
The present study evaluates the relative thermal fatigue life of tin-silver-copper (SnAgCu or SAC) lead-free and tin-lead (SnPb) solders with custom-made BGA assembly configurations generating various stress ranges under thermal cyclic loading. Although the SAC solder bears a lower creep strain rate compared with the SnPb solder in common thermal cycling conditions, it is found that there exits conditions at which the SnPb solder joint maintain a longer life than the SAC solder joint. The determination lies on the maximum normalized equivalent stress levels ( σ / E ) experienced by the two kinds of solder joint during the temperature cycles. Even under the same straining and thermal cycling condition, it is observed that the maximum σ / E induced in the two kinds of solder joint are normally different, as a result of their different rate of stress relaxation. The analysis shows that both the absolute and relative magnitude of σ / E experienced by the two kinds of solder joint affect the relative life. In general, the SAC solder joint sustain a longer life at low σ / E levels, while the SnPb solder joint outperform the SAC solder joint at high σ / E levels. There exists a critical σ / E level at which both solder joints acquire similar performance. However, this margin shifts with the relative magnitude of σ / E the two kinds of solder joint suffered. Having studied the variation of σ / E for the two kinds of solder joint under various loading conditions, this study uncovers the rationale for the difference in the relative thermal fatigue life of the two kinds of solder joint.
Journal Articles
Journal:
Journal of Applied Mechanics
Article Type: Technical Papers
J. Appl. Mech. July 2003, 70(4): 531–542.
Published Online: August 25, 2003
Abstract
Anisotropic strain gradient elasticity theory is applied to the solution of a mode III crack in a functionally graded material. The theory possesses two material characteristic lengths, l and l ′ , which describe the size scale effect resulting from the underlining microstructure, and are associated to volumetric and surface strain energy, respectively. The governing differential equation of the problem is derived assuming that the shear modulus is a function of the Cartesian coordinate y , i.e., G = G y = G 0 e γ y , where G 0 and γ are material constants. The crack boundary value problem is solved by means of Fourier transforms and the hypersingular integrodifferential equation method. The integral equation is discretized using the collocation method and a Chebyshev polynomial expansion. Formulas for stress intensity factors, K III , are derived, and numerical results of K III for various combinations of l , l ′ , and γ are provided. Finally, conclusions are inferred and potential extensions of this work are discussed.