Effects of Gamma Radiation on Resonant and Antiresonant Characteristics of Piezoelectric Wafer Active Sensors

This paper presents gamma radiation effects on resonant and antiresonant characteristics of piezoelectric wafer active sensors (PWAS) for structural health monitoring (SHM) applications to nuclear-spent fuel storage facilities. The irradiation test was done in a Co-60 gamma irradiator. Lead zirconate titanate (PZT) and Gallium Orthophosphate (GaPO₄) PWAS transducers were exposed to 225 kGy gamma radiation dose. First, 2 kGy of total radiation dose was achieved with slower radiation rate at 0.1 kGy/h for 20; h then the remaining radiation dose was achieved with accelerated radiation rate at 1.233 kGy/h for 192 h. The total cumulative radiation dose of 225 kGy is equivalent to 256 years of operation in nuclear-spent fuel storage facilities. Electro-mechanical impedance and admittance (EMIA) signatures were measured after each gamma radiation exposure. Radiation-dependent logarithmic sensitivity of PZT-PWAS in-plane and thickness modes resonance frequency $(∂(fR)/∂( logeRd))$ was estimated as 0.244 kHz and 7.44 kHz, respectively; the logarithmic sensitivity of GaPO₄-PWAS in-plane and thickness modes resonance frequency was estimated as 0.0629 kHz and 2.454 kHz, respectively. Therefore, GaPO₄-PWAS EMIA spectra show more gamma radiation endurance than PZT-PWAS. Scanning electron microscope (SEM) and X-ray diffraction method (XRD) was used to investigate the microstructure and crystal structure of PWAS transducers. From SEM and XRD results, it can be inferred that there is no significant variation in the morphology, the crystal structure, and grain size before and after the irradiation exposure.