A unique rotational double-taper scratching setup is used to study ductile brittle transitions in single crystal (100) p-type silicon using a conical diamond tool at room temperature and scratching speeds ranging between 0.1 m/s and 0.3 m/s. In such a setup, transition from brittle to ductile occurs twice in a single-tapered scratch, during tool entry and tool exit. A well-defined way to determine critical depth of cut via linear crack density per unit crack length is proposed. The scratches were studied using scanning electron microscopy (morphology) and white light interferometry (depth measurements). A comprehensive study of critical depth of cut, compiled from the literature together with data from this study, with scratching speeds from very low to high shows that critical depth of cut decreases from very low scratch speeds to medium scratch speeds and then increases again at very high scratch speeds. An inference from this study is that diamond turning should be conducted at higher cutting speeds than being undertaken today to make use of larger critical depths of cut.
A Study of Scratch Speed Effects on Ductile–Brittle Transition in Silicon
Department of Mechanical Engineering,
Indian Institute of Technology Madras,
Chennai 600036, India
Contributed by the Manufacturing Engineering Division of ASME for publication in the JOURNAL OF MICRO-AND NANO-MANUFACTURING. Manuscript received November 8, 2018; final manuscript received April 22, 2019; published online July 25, 2019. Assoc. Editor: Irene Fassi.
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Alreja, C., and Subbiah, S. (July 25, 2019). "A Study of Scratch Speed Effects on Ductile–Brittle Transition in Silicon." ASME. J. Micro Nano-Manuf. June 2019; 7(2): 024505. https://doi.org/10.1115/1.4043647
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