The aim of this research is to develop a combined polishing technology for single-crystal silicon carbide (SiC) wafers, which is known to be difficult to process due to its high hardness. This paper proposes a combined polishing method based on converting SiC into a material with a relatively low hardness and then polishing this material using abrasive particles with a higher hardness. An electrochemical technique was tried to reduce the hardness of SiC. The effectiveness of the combined technique is experimentally demonstrated. In addition, the temporal changes of the thickness of SiO2 layer and the relationship between the electrochemical machining current and the thickness of SiO2 layer are shown.
Development of Highly Efficient Combined Polishing Method for Single-Crystal Silicon Carbide
Contributed by the Manufacturing Engineering Division of ASME for publication in the JOURNAL OF MICRO- AND NANO-MANUFACTURING. Manuscript received December 14, 2016; final manuscript received May 16, 2017; published online June 7, 2017. Assoc. Editor: Cheryl Xu.
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Kurita, T., Miyake, K., Kawata, K., Ashida, K., and Kato, T. (June 7, 2017). "Development of Highly Efficient Combined Polishing Method for Single-Crystal Silicon Carbide." ASME. J. Micro Nano-Manuf. September 2017; 5(3): 031004. https://doi.org/10.1115/1.4036828
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