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Keywords: silicon
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Journal Articles
Article Type: Research-Article
J. Eng. Mater. Technol. October 2013, 135(4): 041002.
Paper No: MATS-13-1017
Published Online: June 10, 2013
... received May 8, 2013; published online June 10, 2013. Assoc. Editor: Hanchen Huang. 24 01 2013 08 05 2013 In this paper, the effect of surface damage induced by focused ion beam (FIB) fabrication on the mechanical properties of silicon (Si) nanowires (NWs) was investigated. Uniaxial...
Journal Articles
Article Type: Research-Article
J. Eng. Mater. Technol. October 2012, 134(4): 041011.
Published Online: September 4, 2012
... Vlassak. 09 10 2011 10 02 2012 The ductile-to-brittle cutting mode transition in single grit diamond scribing of monocrystalline silicon is investigated in this paper. Specifically, the effects of scriber tip geometry, coefficient of friction, and external hydrostatic pressure...
Journal Articles
Article Type: Research Papers
J. Eng. Mater. Technol. January 2012, 134(1): 011009.
Published Online: December 8, 2011
... machining are able to amplify the actuator’s displacement by a factor of 3.8 along the tensile direction. The biaxial test specimen prepared using conventional micromachining processes is composed of a cross-shaped film section and chucking parts supported by silicon springs. After square holes in four...
Journal Articles
Article Type: Research Papers
J. Eng. Mater. Technol. October 2011, 133(4): 041013.
Published Online: October 20, 2011
...Ming Gan; Vikas Tomar The functioning and performance of today’s integrated circuits and sensors are highly affected by the thermal properties of microscale silicon structures. Due to the well known size effect, the thermal properties of microscale silicon structures are not the same as those...
Journal Articles
Article Type: Research Papers
J. Eng. Mater. Technol. April 2008, 130(2): 021024.
Published Online: April 2, 2008
... understanding of deformation in ductile materials. 20 09 2007 04 01 2008 02 04 2008 dislocation density ductile-brittle transition elasticity flaw detection plastic deformation plates (structures) silicon X-ray microscopy Lattice defects in crystalline materials...
Journal Articles
Article Type: Research Papers
J. Eng. Mater. Technol. January 2008, 130(1): 011002.
Published Online: December 20, 2007
...Jiunn-Jyh Junz Wang; Yong-Yuan Liao This paper investigated the scribing process characteristics of the hard and brittle materials including single crystal silicon, STV glass, and sapphire substrate. Under various cutting angles, major process characteristics are examined including the groove...
Journal Articles
Article Type: Special Section On Nanomaterials And Nanomechanics
J. Eng. Mater. Technol. October 2005, 127(4): 457–461.
Published Online: July 12, 2005
...N. Kalyanasundaram; J. B. Freund; H. T. Johnson Highly disordered, ion-processed silicon is studied using a molecular dynamics simulation with empirical interatomic potentials. The surface free energy density, stress-strain relations, and continuum surface features of silicon, bombarded...
Journal Articles
Article Type: Special Section On Nanomaterials And Nanomechanics
J. Eng. Mater. Technol. October 2005, 127(4): 462–467.
Published Online: May 8, 2005
.... By use of simple model Monte Carlo simulations, we show that the computed interactions between carbon atoms and DVs lead to self-assembled vacancy lines, in qualitative agreement with recent experimental results. 07 02 2005 08 05 2005 silicon carbon elemental semiconductors vacancies...
Journal Articles
Article Type: Research Papers
J. Eng. Mater. Technol. January 2005, 127(1): 90–96.
Published Online: February 22, 2005
.... Manuscript received January 27, 2004; revision received June 23, 2004. Review conducted by: A. Pelegri. 27 January 2004 23 June 2004 22 02 2005 silicon elemental semiconductors semiconductor thin films micromechanical devices plastic deformation failure (mechanical) creep...
Journal Articles
Article Type: Special Section On Nanomaterials And Nanomechanics
J. Eng. Mater. Technol. October 2005, 127(4): 434–443.
Published Online: January 30, 2005
... the importance of accounting for surface energy anisotropy in growth models. 21 09 2004 30 01 2005 silicon germanium semiconductor quantum dots self-assembly epitaxial growth internal stresses surface energy island structure Nanoscale devices hold promise for wide ranging...
Journal Articles
Article Type: Technical Papers
J. Eng. Mater. Technol. October 2003, 125(4): 361–367.
Published Online: September 22, 2003
... to be different from their bulk counterparts. In this paper, low- k porous silica thin films spin coated on silicon substrates are studied. The roughness of spin-on coated porous silica films is analyzed with in-situ imaging and their mechanical properties are determined using nanoindentation. A Berkovich type...