Abstract
Double-sided lapping (DSL) is always employed as a precision process for machining flat workpieces, such as optical windows, wafers, and brake pads taking advantage of its high efficiency and parallelism. However, the mechanism of parallelism error reduced by the DSL process was rarely investigated. Furthermore, the relationship between parallelism and flatness was not clearly illustrated. To explain why the parallelism of workpieces becomes convergent by the DSL, a theoretical model has been developed in this paper by calculating the parallelism evolution with the consideration of various contact situations between workpieces and lapping plates for the first time. Moreover, five workpieces, including a slanted and four parallel ones, are applied to develop the parallelism evolution guaranteeing the model close to the actual process, and the mechanism of the parallelism error reduced by the DSL process is elucidated. The calculation result revealed that the parallelism was improved from 100.0 µm to 25.6 µm according to the proposed model. The experimental results showed that the parallelism error reduced from 108.6 µm to 28.2 µm, which was consistent with the calculation results.
Issue Section:
Technical Brief
References
1.
Chen
, C. C. A.
, and Hsu
, L. S.
, 2008
, “A Process Model of Wafer Thinning by Diamond Grinding
,” J. Mater. Process. Technol.
, 201
(1–3
), pp. 606
–611
. 2.
Kim
, Y. S.
, Maeda
, N.
, Kitada
, H.
, Fujimoto
, K.
, Kodama
, S.
, Kawai
, A.
, Arai
, K.
, Suzuki
, K.
, Nakamura
, T.
, and Ohba
, T.
, 2013
, “Advanced Wafer Thinning Technology and Feasibility Test for 3D Integration
,” Microelectron. Eng.
, 107
, pp. 65
–71
. 3.
Lee
, T.
, Jeong
, H.
, Kim
, H.
, Lee
, S.
, and Kim
, D.
, 2016
, “Effect of Platen Shape on Evolution of Total Thickness Variation in Single-Sided Lapping of Sapphire Wafer
,” Int. J. Precis. Eng. Manuf-Green. Technol.
, 3
(3
), pp. 225
–229
. 4.
Vannoni
, M.
, and Bertozzi
, R.
, 2007
, “Parallelism Error Characterization With Mechanical and Interferometric Methods
,” Opt. Laser. Eng.
, 45
(6
), pp. 719
–722
. 5.
Shi
, J.
, Wu
, Q.
, Zhang
, J.
, Huang
, Y.
, Yang
, X.
, and Ding
, Y.
, 2012
, “Thermal Optical Analysis for Optical Window of High-Altitude and High-Speed Aerial Camera
,” Acta Opt. Sin.
, 32
(4
), p. 0422004
. 6.
Feng
, J.
, Jing
, F.
, and Zhang
, G.
, 1997
, “Dynamic Ductile Fragmentation and the Damage Function Model
,” J. Appl. Phys.
, 81
(6
), pp. 2575
–2578
. 7.
Marks
, M. R.
, Hassan
, Z.
, and Cheong
, K. Y.
, 2015
, “Ultrathin Wafer Pre-Assembly and Assembly Process Technologies: A Review
,” Crit. Rev. Solid. State
, 40
(5
), pp. 251
–290
. 8.
Goel
, S.
, Luo
, X. C.
, Reuben
, R. L.
, and Pen
, H. M.
, 2012
, “Influence of Temperature and Crystal Orientation on Tool Wear During Single Point Diamond Turning of Silicon
,” Wear
, 284–285
, pp. 65
–72
. 9.
Mukaida
, M.
, and Yan
, J. W.
, 2017
, “Ductile Machining of Single-Crystal Silicon for Microlens Arrays by Ultraprecision Diamond Turning Using a Slow Tool Servo
,” Int. J. Mach. Tools Manuf.
, 115
, pp. 2
–14
. 10.
Patten
, J. A.
, and Jacob
, J.
, 2008
, “Comparison Between Numerical Simulations and Experiments for Single-Point Diamond Turning of Single-Crystal Silicon Carbide
,” J. Manuf. Process.
, 10
(1
), pp. 28
–33
. 11.
Sun
, Z.
, To
, S.
, and Zhang
, S.
, 2018
, “A Novel Ductile Machining Model of Single-Crystal Silicon for Freeform Surfaces With Large Azimuthal Height Variation by Ultra-Precision Fly Cutting
,” Int. J. Mach. Tools Manuf.
, 135
, pp. 1
–11
. 12.
Zhang
, G.
, Ran
, J.
, To
, S.
, Wu
, X.
, Huang
, P.
, and Kuzmin
, M. P.
, 2020
, “Size Effect on Surface Generation of Multiphase Alloys in Ultra-Precision Fly Cutting
,” J. Manuf. Process.
, 60
, pp. 23
–36
. 13.
Zhang
, S. J.
, To
, S.
, Zhu
, Z. W.
, and Zhang
, G. Q.
, 2016
, “A Review of Fly Cutting Applied to Surface Generation in Ultra-Precision Machining
,” Int. J. Mach. Tools Manuf.
, 103
, pp. 13
–27
. 14.
Bai
, K.
, Qin
, J.
, Lee
, K. M.
, and Hao
, B.
, 2019
, “Design and Chatter Prediction Analysis of a Duplex Face Turning Machine for Manufacturing Disk-Like Workpieces
,” Int. J. Mach. Tools Manuf.
, 140
, pp. 12
–19
. 15.
Deja
, M.
, Lichtschlag
, L.
, and Uhlmann
, E.
, 2021
, “Thermal and Technological Aspects of Double Face Grinding of C45 Carbon Steel
,” J. Manuf. Process.
, 64
, pp. 1036
–1046
. 16.
Li
, Z.
, Deng
, Z.
, and Hu
, Y.
, 2020
, “Effects of Polishing Parameters on Surface Quality in Sapphire Double-Sided CMP
,” Ceram. Int.
, 46
(9
), pp. 13356
–13364
. 17.
Guo
, J.
, Wang
, B.
, He
, Z. X.
, Pan
, B.
, Du
, D. X.
, Huang
, W.
, and Kang
, R. K.
, 2021
, “A Novel Method for Workpiece Deformation Prediction by Amending Initial Residual Stress Based on SVR-GA
,” Adv. Manuf.
, 9
(4
), pp. 483
–495
. 18.
Klamecki
, B. E.
, 2001
, “Comparison of Material Removal Rate Models and Experimental Results for the Double-Sided Polishing Process
,” J. Mater. Process. Technol.
, 109
(3
), pp. 248
–253
. 19.
Mahamad Sahab
, A. R.
, Saad
, N. H.
, Rashid
, A. A.
, Yusoff
, N.
, Said
, N. M.
, Zubair
, A. F.
, and Jaffar
, A.
, 2013
, “Effect of Double Sided Process Parameters in Lapping Silicon Wafer
,” Appl. Mech. Mater.
, 393
, pp. 259
–265
. 20.
Kasai
, T.
, 2008
, “A Kinematic Analysis of Disk Motion in a Double Sided Polisher for Chemical Mechanical Planarization (CMP)
,” Tribol. Int.
, 41
(2
), pp. 111
–118
. 21.
Wang
, L. J.
, Hu
, Z. W.
, Yu
, Y. Q.
, and Xu
, X. P.
, 2018
, “Evaluation of Double-Sided Planetary Grinding Using Diamond Wheels for Sapphire Substrates
,” Crystals.
, 8
(7
), p. 13
. 22.
Qi
, Z. Q.
, Lu
, W. J.
, and Lee
, W. M.
, 2014
, “A Hydrodynamic and Kinematic Analysis of Chemical-Mechanical Planarization Mechanism in Double Sided Polisher
,” Int. J. Mach. Tools Manuf.
, 82–83
, pp. 59
–67
. 23.
Li
, Z. C.
, Pei
, Z. J.
, and Fisher
, G. R.
, 2006
, “Simultaneous Double Side Grinding of Silicon Wafers: A Literature Review
,” Int. J. Mach. Tool. Manuf.
, 46
(12–13
), pp. 1449
–1458
. 24.
Pietsch
, G. J.
, and Kerstan
, M.
, 2005
, “Understanding Simultaneous Double-Disk Grinding: Operation Principle and Material Removal Kinematics in Silicon Wafer Planarization
,” Precis. Eng.
, 29
(2
), pp. 189
–196
. 25.
Hirose
, K.
, and Enomoto
, T.
, 2009
, “Optimization of Double-Sided Polishing Conditions to Achieve High Flatness: Consideration of Relative Motion Direction
,” Int. J. Auto. Technol.
, 3
(5
), pp. 581
–591
. 26.
Li
, S.
, Wang
, Z.
, and Wu
, Y.
, 2008
, “Relationship Between Subsurface Damage and Surface Roughness of Optical Materials in Grinding and Lapping Processes
,” J. Mater. Process. Technol.
, 205
(1–3
), pp. 34
–41
. 27.
Kim
, H. M.
, Manivannan
, R.
, Moon
, D. J.
, Xiong
, H.
, and Park
, J. G.
, 2013
, “Evaluation of Double Sided Lapping Using a Fixed Abrasive Pad for Sapphire Substrates
,” Wear
, 302
(1–2
), pp. 1340
–1344
. 28.
Wang
, L. J.
, Hu
, Z. W.
, Chen
, Y.
, Yu
, Y. Q.
, and Xu
, X. P.
, 2020
, “Material Removal Mechanism of Sapphire Substrates With Four Crystal Orientations by Double-Sided Planetary Grinding
,” Ceram. Int.
, 46
(6
), pp. 7813
–7822
. 29.
Kim
, H. M.
, Park
, G. H.
, Seo
, Y. G.
, Moon
, D. J.
, Cho
, B. J.
, and Park
, J. G.
, 2015
, “Comparison Between Sapphire Lapping Processes Using 2-Body and 3-Body Modes as a Function of Diamond Abrasive Size
,” Wear
, 332–333
, pp. 794
–799
. 30.
Yu
, Y. Q.
, Hu
, Z. W.
, Wang
, W. S.
, Zhao
, H.
, Lu
, J.
, and Xu
, X. P.
, 2020
, “The Double-Side Lapping of SiC Wafers With Semifixed Abrasives and Resin–Combined Plates
,” Int. J. Adv. Manuf. Technol.
, 108
(4
), pp. 997
–1006
. 31.
Gagliardi
, J. J.
, Kim
, D.
, Sokol
, J. J.
, Zazzera
, L. A.
, Romero
, V. D.
, Atkinson
, M. R.
, Nabulsi
, F.
, and Zhang
, H.
, 2013
, “A Case for 2-Body Material Removal in Prime LED Sapphire Substrate Lapping and Polishing
,” J. Manuf. Process.
, 15
(3
), pp. 348
–354
. 32.
Lai
, Z.
, Hu
, Z.
, Fang
, C.
, Xiao
, Z.
, Hsieh
, P.
, and Chen
, M.
, 2019
, “Study on the Wear Characteristics of a Lapping Wheel in Double-Sided Lapping Based on the Trajectory Distribution
,” IEEE Trans. Semicond. Manuf.
, 32
(3
), pp. 352
–358
. 33.
Wang
, L. J.
, Hu
, Z. W.
, Fang
, C. F.
, Yu
, Y. Q.
, and Xu
, X. P.
, 2018
, “Study on the Double-Sided Grinding of Sapphire Substrates With the Trajectory Method
,” Precis. Eng.
, 51
, pp. 308
–318
. 34.
Li
, H. N.
, Yang
, Y.
, Zhao
, Y. J.
, Zhang
, Z.
, Zhu
, W.
, Wang
, W.
, and Qi
, H.
, 2019
, “On the Periodicity of Fixed-Abrasive Planetary Lapping Based on a Generic Model
,” J. Manuf. Process.
, 44
, pp. 271
–287
. 35.
Hashimoto
, Y.
, Ozaki
, R.
, Furumoto
, T.
, and Hosokawa
, A.
, 2022
, “A Calculation Method for Workpiece Profile Variation During Double-Sided Lapping by Considering Workpiece Elastic Deformation
,” Precis. Eng.
, 73
, pp. 457
–469
. 36.
Srinivasa-Murthy
, C.
, Wang
, D.
, Beaudoin
, S. P.
, Bibby
, T.
, Holland
, K.
, and Cale
, T. S.
, 1997
, “Stress Distribution in Chemical Mechanical Polishing
,” Thin. Solid. Films
, 308
, pp. 533
–537
. 37.
Zhang
, P.
, Yang
, J. F.
, and Li
, L.
, 2020
, “Trajectory Uniformity of the Double-Sided Mechanical Polishing of SiC Single Crystal Substrate
,” Mater. Sci. Semicond. Process.
, 107
, p. 11
. 38.
Pan
, B.
, Kang
, R.
, Guo
, J.
, Fu
, H.
, Du
, D.
, and Kong
, J.
, 2019
, “Precision Fabrication of Thin Copper Substrate by Double-Sided Lapping and Chemical Mechanical Polishing
,” J. Manuf. Process.
, 44
, pp. 47
–54
. 39.
Yohei
, H.
, Ryota
, K.
, Tatsuaki
, F.
, and Akira
, H.
, 2017
, “Development of Highly Accurate Simulation Model of Wafer Behavior Considering Contact Between Wafer and Carrier During Double-Sided Lapping
,” Int. J. Jpn. Soc. Precis. Eng.
, 83
(5
), pp. 433
–438
. 40.
Chang
, R. S.
, and Chern
, D. C.
, 1994
, “Highly Accurate Flatness and Parallelism in the Manufacture of Thin Sapphire Flat Lenses
,” Opt. Eng.
, 33
(2
), pp. 620
–626
. 41.
Ohmori
, H.
, Lin
, W.
, and Ueno
, Y.
, 2005
, “Work Parallelism Improvement in Double-Sided Lapping on a New Type Lapping Machine
,” Proc. JSPE Semestrial Meet.
, J25
, pp. 839
–840
. 42.
Hiroki
, H.
, Toshio
, K.
, Hideaki
, N.
, and Masayoshi
, G.
, 2006
, “Study on Parallel Improving in Double-Sided Lapping Machine
,” Proc. JSPE Semestrial Meet.
, G37
, pp. 509
–510
. 43.
McGrath
, J.
, and Davis
, C.
, 2004
, “Polishing Pad Surface Characterisation in Chemical Mechanical Planarization
,” J. Mater. Process. Technol.
, 153–154
, pp. 666
–673
. 44.
Johnson
, K. L.
, 1985
, Contact Mechanics
, Cambridge University Press
, Cambridge, Britain
.45.
Pan
, B.
, Kang
, R.
, Zhu
, X.
, Du
, D.
, Huang
, W.
, and Guo
, J.
, 2022
, “Formation Mechanism of Concave and Convex Surface Shapes in Double-Sided Lapping
,” J. Mater. Process. Technol.
, 309
, p. 11749
. 46.
Wu
, D.
, Kang
, R.
, Guo
, J.
, Liu
, Z.
, Wan
, C.
, and Jin
, Z.
, 2019
, “On the Reaction Mechanism of a Hydroxyethylidene Diphosphonic Acid-Based Electrolyte for Electrochemical Mechanical Polishing of Copper
,” Electrochem. Commun.
, 103
, pp. 48
–54
. 47.
Zhang
, J.
, Pan
, B.
, Liu
, H.
, Zhu
, X.
, Kang
, R.
, Du
, D.
, and Guo
, J.
, 2022
, “Parallelism Measurement Method for Nontransparent Flat Parts
,” Appl. Opt.
, 61
(17
), pp. 4993
–5001
. Copyright © 2023 by ASME
You do not currently have access to this content.
