In this paper, the femtosecond laser ablation of silicon is investigated by a two-dimensional hydrodynamic model. The ablation depth of the silicon wafer ablated in air at different laser intensities is calculated, and the corresponding experimental measurements are carried out for validation. Two different ablation regimes have been identified by varying the laser fluence. While two-photon absorption dominates in the low fluence regime (<2 J/cm2), electron heat diffusion is a major energy transport mechanism at higher laser fluences (>2 J/cm2). The ablation efficiency first increases with the laser fluence, and reaches the peak value at the laser fluence around 8 J/cm2. It starts to drop when the laser fluence further increases, because of the early plasma absorption of the laser beam energy.
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December 2013
Research-Article
Ablation Dynamics of Silicon by Femtosecond Laser and the Role of Early Plasma
Y. C. Shin
Y. C. Shin
1
e-mail: shin@purdue.edu
Center for Laser-Based Manufacturing,
School of Mechanical Engineering,
Center for Laser-Based Manufacturing,
School of Mechanical Engineering,
Purdue University
,West Lafayette, IN 47907
1Corresponding author.
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Y. C. Shin
e-mail: shin@purdue.edu
Center for Laser-Based Manufacturing,
School of Mechanical Engineering,
Center for Laser-Based Manufacturing,
School of Mechanical Engineering,
Purdue University
,West Lafayette, IN 47907
1Corresponding author.
Manuscript received April 29, 2013; final manuscript received October 18, 2013; published online November 18, 2013. Editor: Y. Lawrence Yao.
J. Manuf. Sci. Eng. Dec 2013, 135(6): 061015 (5 pages)
Published Online: November 18, 2013
Article history
Received:
April 29, 2013
Revision Received:
October 18, 2013
Citation
Zhao, X., and Shin, Y. C. (November 18, 2013). "Ablation Dynamics of Silicon by Femtosecond Laser and the Role of Early Plasma." ASME. J. Manuf. Sci. Eng. December 2013; 135(6): 061015. https://doi.org/10.1115/1.4025805
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