A detailed mathematical model for the growth of gallium nitride in a vertical impinging metalorganic chemical vapor deposition (MOCVD) reactor is developed first, and the complete chemical mechanisms are introduced. Then, one validation study is conducted to ensure its accuracy. After that, the flow, temperature and concentration profiles are predicted by numerical modeling. The dependence of the growth rate and uniformity of the deposited layers on operating conditions, such as reactor operating pressure, susceptor temperature, inlet velocity and concentration ratio of the precursors, is investigated to gain greater insight into the reactor performance and characteristics. Based on the simulation results, discussion is presented in this paper to offer the possibility of better control of the GaN film growth process and to ultimately lead to an optimization of the process, with respect to production rate and film quality.
Issue Section:
Research Papers
References
1.
Feng
, Z. C.
, 2006
, III-Nitride Semiconductor Materials
, Imperial College Press
, London
, p. 3
.2.
Kamler
, G.
, Zachara
, J.
, Pldsiadlo
, S.
, Adamowicz
, L.
, and Gebicki
, W.
, 2000
, “Bulk GaN Single-crystals Growth
,” J. Crys. Growth
, 212
(1–2
), pp. 39
–48
.10.1016/S0022-0248(99)00890-83.
Gao
, Y.
, Gulino
, D. A.
, and Higgins
, R.
, 1999
, “Effects of Susceptor Geometry on GaN Growth on Si(111) With a New MOCVD Reactor
,” MRS Internet J. Nitride Semicond. Res.
, 4S1
, pp. G3.53
.4.
Cho
, S. H.
, Hata
, K.
, Maruyama
, T.
, and Akimoto
, K.
, 1997
, “Optical and Structural Properties of GaN Films Grown on C-plane Al2O3 by Electron Cyclotron Resonance Molecular Beam Epitaxy
,” J. Cryst. Growth
, 173
(3–4
), pp. 260
–265
.10.1016/S0022-0248(96)00900-15.
Stringfellow
, G. B.
, 1999
, Organometallic Vapor-Phase Epitaxy: Theory and Practice.
Academic Press
, New York
, p. 6
.6.
Amano
, H.
, Sawaki
, N.
, Akasaki
, I.
, and Toyoda
, Y.
, 1986
, “Metalorganic Vapor Phase Epitaxial Growth of a High Quality GaN Film Using an AlN Buffer Layer
,” Appl. Phys. Lett.
, 48
(5
), pp. 353
–355
.10.1063/1.965497.
Wu
, B.
, Ma
, R.
, and Zhang
, H.
, 2003
, “Epitaxy Growth Kinetics of GaN Films
,” J. Cryst. Growth
, 250
(1–2
), pp. 14
–21
.10.1016/S0022-0248(02)02208-X8.
Safvi
, S. A.
, Redwing
, J. M.
, Tischler
, M. A.
, and Kuech
, T. F.
, 1997
, “GaN Growth by Metallorganic Vapor Phase Epitaxy: A Comparison of Modeling and Experimental Measurements
,” J. Electrochem. Soc.
, 144
(5
), pp. 1789
–1796
.10.1149/1.18376819.
Theodorpoulos
, C.
, Mountziaris
, T. J.
, Moffat
, H. K.
, and Han
, J.
, 2000
, “Design of Gas Inlets for the Growth of Gallium Nitride by Metalorganic Vapor Phase Epitaxy
,” J. Cryst. Growth
, 217
(1–2
), pp. 65
–81
.10.1016/S0022-0248(00)00402-410.
Sengupta
, D.
, Mazumder
, S.
, Kuykendall
, W.
, and Lowry
, S. A.
, 2005
, “Combined Ab Initio Quantum Chemistry and Computational Fluid Dynamics Calculations for Prediction of Gallium Nitride Growth
,” J. Cryst. Growth
, 279
(3–4
), pp. 369
–382
.10.1016/j.jcrysgro.2005.02.03611.
CFD-ACE+, A multi-physics CFD code developed by CFD Research Corporation, Huntsville, AL.
12.
Mazumder
, S.
, and Lowry
, S. A.
, 2001
, “The Importance of Predicting Rate-limited Growth for Accurate Modeling of Commercial MOCVD Reactors
,” J. Cryst. Growth
, 224
(1–2
), pp. 165
–174
.10.1016/S0022-0248(01)00813-213.
Salinger
, A. G.
, Shadid
, J. N.
, Hutchinson
, S. A.
, Hennigan
, G. L.
, Devine
, K. D.
, and Moffat
, H. K.
, 1999
, “Analysis of Gallium Arsenide Deposition in a Horizontal Chemical Vapor Deposition Reactor Using Massively Parallel Computations
,” J. Cryst. Growth
, 203
(4
), pp. 516
–533
.10.1016/S0022-0248(99)00140-214.
Thon
, A.
, and Kuech
, T. F.
, 1996
, “High Temperature Adduct Formation of Trimethylgallium and Ammonia
,” Appl. Phys. Lett.
, 69
(1
), pp. 55
–57
.10.1063/1.11811715.
Sengupta
, D.
, 2003
, “Does the Ring Compound [(CH3)2GaNH2]3 Form During MOVPE of Gallium Nitride? Investigations via Density Functional and Reaction Rate Theories
,” J. Phys. Chem. B
, 107
(1
), pp. 291
–297
.16.
Meng
, J.
, and Jaluria
, Y.
, 2013
, “Thermal Transport in the Gallium Nitride Chemical Vapor Deposition Process
,” ASME 2013 Summer Heat Transfer Conference (HT2013)
, Minneapolis, MN
, Paper No. HT2013-17081.17.
Chase
, M. W.
, 1998
, NIST-JANAF Thermochemical Tables
, 4th ed., National Institute of Standards and Technology
, Gaithersburg, MD
.18.
Chen
, C. H.
, Liu
, H.
, Steigerwald
, D.
, Imler
, W.
, Kuo
, C. P.
, Craford
, M. G.
, Ludowise
, M.
, Lester
, S.
, and Amano
, J.
, 1996
, “A Study of Parasitic Reactions Between NH3 and TMGa or TMAl
,” J. Electron. Mater.
, 25
(6
), pp. 1004
–1008
.10.1007/BF0266673619.
Lin
, P. T.
, Jaluria
, Y.
, and Gea
, H. C.
, 2009
, “Parametric Modeling and Optimization of Chemical Vapor Deposition Process
,” ASME J. Manuf. Sci. Eng.
, 131
(1
), pp. 92
–98
.10.1115/1.306368920.
George
, P.
, Gea
, H. C.
, and Jaluria
, Y.
, 2006
, “Optimization of Chemical Vapor Deposition Process
,” 32nd Design Automation Conference, Parts A and B, ASME Conference Proceedings Series
, Philadelphia, PA
, pp. 309
–316
.21.
Wang
, R.
, Ma
, R.
, and Zupan
, M.
, 2006
, “Modeling of Chemical Vapor Deposition of Large-Area Silicon Carbide Thin Film
,” J. Cryst. Growth Des.
, 6
(11
), pp. 2592
–2597
.10.1021/cg060401b22.
Baek
, J. S.
, Boo
, J. H.
, and Kim
, Y. J.
, 2008
, ''Effects of Operating Conditions on the Deposition of GaAs in a Vertical CVD Reactor
,” Surf. Rev. Lett.
, 15
(1-2
), pp. 111
–116
.10.1142/S0218625X0801107XCopyright © 2013 by ASME
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