Chemical vapor deposition (CVD) is a widely used manufacturing process for obtaining thin films of materials like silicon, silicon carbide, graphene, and gallium nitride that are employed in the fabrication of electronic and optical devices. Gallium nitride (GaN) thin films are attractive materials for manufacturing optoelectronic device applications due to their wide band gap and superb optoelectronic performance. The reliability and durability of the devices depend on the quality of the thin films. The metal-organic chemical vapor deposition (MOCVD) process, which uses compounds that contain metals and organic ligands as precursors in a CVD reactor, is a common technique used to fabricate high-quality GaN thin films. The deposition rate and uniformity of thin films are critical to a successful and useful process. These are determined by the thermal transport processes and chemical reactions occurring in the reactor, and are manipulated by controlling the operating conditions and the reactor geometrical configuration. In this study, the epitaxial growth of GaN thin films on sapphire (Al2O3) substrates is carried out in two commercial MOCVD systems: a vertical rotating disk MOCVD reactor and a close-coupled showerhead MOCVD reactor. The surface morphology and crystal quality of GaN thin films have been examined using atomic force microscopy (AFM) and scanning electron microscope (SEM). This paper focuses on the composition of the precursor and the carrier gases since earlier studies have shown the importance of precursor composition. The results show that the flow rate of trimethylgallium (TMG), which is the main ingredient in the process, has a significant effect on the deposition rate and uniformity of the films. Also, the carrier gas plays an important role in deposition rate and uniformity. Using hydrogen as a carrier gas enhances the quality of the thin film but a lower deposition rate occurs on the wafer surface. On the other hand, a high flow rate of pure nitrogen gas improves the growth rate of the film. However, it decreases the uniformity of the film and promotes carbon contamination on the wafer surface. Thus, the use of an appropriate mixture of hydrogen and nitrogen as the carrier gas can improve the deposition rate and quality of GaN thin films.