To improve performance and reliability of integrated circuits, accurate knowledge of thermal transport properties must be possessed. In particular, reduced dimensions increase boundary scattering and the significance of thermal contact resistance. A thermoreflectance measurement can be used with a valid heat transport model to experimentally quantify the contact thermal resistance of thin film interconnects. In the current work, a quasi-steady state thermoreflectance measurement is used to determine the temperature distribution of a thin film gold interconnect (100 nm) undergoing Joule heating. By comparing the data to a heat transport model accounting for thermal diffusion, dissipation, and Joule heating, a measure of the thermal dissipation or overall thermal resistance of unit area is obtained. The gold film to substrate overall thermal resistance of unit area beneath the wide lead (10 μm) and narrow line (1 μm) of the interconnect are 1.64 × 10−6 m2 K/W and 5.94 × 10−6 m2 K/W, respectively. The thermal resistance of unit area measurements is comparable with published results based on a pump-probe thermoreflectance measurement.

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