Thin films (, ) of deposited on Si and were heated to . Their reflectance in the infrared was measured using a Fourier transform infrared spectrometer equipped with a multiple angle reflectometer before and after exposure to the high-temperature heat treatment. An interfacial layer formed by the diffusion of Si from the substrate into the deposited film was observed using Auger depth profiling, and the effect of this interfacial layer on the reflectance was measured. Using a least squares optimization technique coupled with an optical admittance algorithm, the multiple angle reflectance data were used to calculate the optical constants of the as deposited film, crystalline , and the interfacial layer in the 1.6 to range. The interfacial layer formed due to exposure to high temperature was found to be more absorptive than the crystalline .
Issue Section:
Technical Papers
Keywords:
tantalum compounds,
silicon compounds,
vacuum deposited coatings,
heat treatment,
reflectivity,
infrared spectra,
Fourier transform spectra,
reflectometry,
surface diffusion,
Auger effect,
least squares approximations,
optical constants,
infrared reflectance,
optical constants,
interfacial layer,
high temperature
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