The problem of self-heating in microelectronic devices has begun to emerge as a bottleneck to device performance. Published models for phonon transport in microelectronics have used a gray Boltzmann transport equation (BTE) and do not account adequately for phonon dispersion or polarization. In this study, the problem of a hot spot in a submicron silicon-on-insulator transistor is addressed. A model based on the BTE incorporating full phonon dispersion effects is used. A structured finite volume approach is used to solve the BTE. The results from the full phonon dispersion model are compared to those obtained using a Fourier diffusion model. Comparisons are also made to previously published BTE models employing gray and semi-gray approximations. Significant differences are found in the maximum hot spot temperature predicted by the different models. Fourier diffusion underpredicts the hot spot temperature by as much as 350% with respect to predictions from the full phonon dispersion model. For the full phonon dispersion model, the longitudinal acoustic modes are found to carry a majority of the energy flux. The importance of accounting for phonon dispersion and polarization effects is clearly demonstrated.
Comparison of Different Phonon Transport Models for Predicting Heat Conduction in Silicon-on-Insulator Transistors
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Narumanchi, S. V. J., Murthy, J. Y., and Amon, C. H. (March 1, 2005). "Comparison of Different Phonon Transport Models for Predicting Heat Conduction in Silicon-on-Insulator Transistors." ASME. J. Heat Transfer. July 2005; 127(7): 713–723. https://doi.org/10.1115/1.1924571
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