Transient bubble formation experiments are investigated on polysilicon micro-resisters having dimensions of 95 μm in length, 10 μm or 5 μm in width, and 0.5 μm in thickness. Micro resisters act as both resistive heating sources and temperature transducers simultaneously to measure the transient temperature responses beneath the thermal bubbles. The micro bubble nucleation processes can be classified into three groups depending on the levels of the input current. When the input current level is low, no bubble is nucleated. In the middle range of the input current, a single spherical bubble is nucleated with a waiting period up to 2 sec while the wall temperature can drop up to 8°C depending on the magnitude of the input current. After the formation of a thermal bubble, the resister temperature rises and reaches a steady state eventually. The bubble growth rate is found proportional to the square root of time that is similar to the heat diffusion controlled model as proposed in the macro scale boiling experiments. In the group of high input current, a single bubble is nucleated immediately after the current is applied. A first-order model is proposed to characterize the transient bubble nucleation behavior in the micro-scale and compared with experimental measurements.
Transient Thermal Bubble Formation on Polysilicon Micro-Resisters
Contributed by the Heat Transfer Division for publication in the JOURNAL OF HEAT TRANSFER. Manuscript received by the Heat Transfer Division April 26, 2001; revision received October 18, 2001. Associate Editor: G. P. Peterson.
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Tsai, J., and Lin, L. (October 18, 2001). "Transient Thermal Bubble Formation on Polysilicon Micro-Resisters ." ASME. J. Heat Transfer. April 2002; 124(2): 375–382. https://doi.org/10.1115/1.1445136
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