Recrystallization of thin semiconductor films can yield improved electrical and crystalline properties. Recrystallization is often effected by using a laser source to melt the semiconductor film, which has been deposited on an amorphous insulating substrate. Although temperature measurement data would be valuable for the processing of materials on a microscopic scale, very few such measurements have been presented. It is the intent of this paper to demonstrate work toward the development of completely noninvasive experimental methods for in situ quantitative analysis of the laser annealing process, based on the acquisition of surface radiative data.

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