This paper develops a conductive heat transfer stability theory for the laser-driven melting and recrystallization of thin silicon films deposited on conductive (glass) substrates. The important parameters are: laser power, laser intensity distribution, and beam scanning speed. Basic state temperature distributions are obtained for straight phase boundaries. These calculated temperature distributions show the origin of instability. A linear perturbation analysis is used to obtain the leading order corrections to the basic-state temperature fields. The perturbation time rate of growth, as a function of the disturbance wavelength, is then predicted.

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