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Journal Articles

Buoyancy Convection During the Growth of Si x Ge 1− x by the Traveling Solvent Method (TSM)

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M. Z. Saghir, T. J. Makriyannis, D. Labrie
Journal: Journal of Fluids Engineering
Publisher: ASME
Article Type: Technical Papers
J. Fluids Eng. March 2004, 126(2): 223–228.
https://doi.org/10.1115/1.1669414
Published Online: May 3, 2004
... the losses of heat by radiation and the use of the phase diagram to determine the silicon concentration at the growth interface. Results reveal a strong convection in the solvent, which in turn is detrimental to the growth uniformity in the crystal rod. Additional numerical results show that the convective...
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Topics: Boundary-value problems, Buoyancy, Convection, Crystals, Finite element analysis, Navier-Stokes equations, Phase diagrams, Temperature, Silicon, Crystal growth