Gas flows in plasma etching reactors for semiconductor fabrication became a chief consideration in designing second-generation reactors with higher etching rates. An axisymmetrical model based on the direct simulation Monte Carlo method has been developed for analyzing rarefied gas flows in a vacuum chamber with the conditions of downstream pressure and gas flow rate. By using this simulator, rarefied gas flows with radicals and etch-products were calculated for microwave-plasma etching reactors. The results showed that the flow patterns in the plasma chamber strongly depend on the Knudsen number and the gas-supply structure. The ventilation of the etch-products in the plasma chamber was found to be improved both for higher Knudsen numbers and for gas-supply structures of the downward-flow type, as compared with those of the radial-flow or upward-flow types.
Direct Simulation Monte Carlo Analysis of Rarefied Gas Flow Structures and Ventilation of Etching Gas in Magneto-Microwave Plasma Etching Reactors
Contributed by the Fluids Engineering Division for publication in the JOURNAL OF FLUIDS ENGINEERING. Manuscript received by the Fluids Engineering Division March 14, 2001; revised manuscript received November 27, 2001. Associate Editor: Y. Matsumoto.
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Ikegawa, M., Ogawa , Y., Fukuyama, R., Usui , T., and Tanaka, J. (May 28, 2002). "Direct Simulation Monte Carlo Analysis of Rarefied Gas Flow Structures and Ventilation of Etching Gas in Magneto-Microwave Plasma Etching Reactors ." ASME. J. Fluids Eng. June 2002; 124(2): 476–482. https://doi.org/10.1115/1.1459074
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