Abstract
Since insulated gate bipolar transistor (IGBT) is a core component for power conversion in a power electronic system, guaranteeing the safety of IGBT becomes a crucial task for the maintenance of the power system. However, the mechanism of IGBT failure is a considerably complicated process related to the dynamic process, involving electric, thermal, and mechanical. Hence, understanding the behaviors of IGBT under multiphysics fields coupling plays an important role in the design and reliability studies of IGBT. In this paper, we review the multiphysics coupling effects, namely, electrical–thermal coupling, thermal–mechanical coupling, and mechanical–electrical coupling, inside IGBT modules. The basic principles of each coupling, coupling models, reliability analysis, as well as key issues and development trends are discussed in detail, respectively.
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