In this paper, thermal management in GaN (gallium nitride) based microelectronic devices is addressed using microfluidic cooling. Numerical modeling is done using finite element analysis (FEA), and the results for temperature distribution are presented for a system comprising multiple cooling channels underneath GaN high-electron mobility transistors (HEMTs). The thermal stack modeled is compatible for heterogeneous integration with conventional silicon-based CMOS devices. Parametric studies for cooling performance are done over a range of geometric and flow factors to determine the optimal cooling configuration within the specified constraints. A power dissipation of 2–4 W/mm is modeled along each HEMT finger in the proposed configuration. The cooling arrangements modeled here hold promising potential for implementation in high-performance radio-frequency (RF) systems for power amplifiers, transmission lines, and other applications in defense and military.
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March 2017
Research-Article
Modeling and Analysis for Thermal Management in Gallium Nitride HEMTs Using Microfluidic Cooling
Gunjan Agarwal,
Gunjan Agarwal
Department of Mechanical Engineering,
École polytechnique fédérale de Lausanne,
MED 1 1017 (Batiment MED),
Station 9,
Lausanne 1015, Switzerland
e-mail: agarwalg@alum.mit.edu
École polytechnique fédérale de Lausanne,
MED 1 1017 (Batiment MED),
Station 9,
Lausanne 1015, Switzerland
e-mail: agarwalg@alum.mit.edu
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Thomas Kazior,
Thomas Kazior
Raytheon Integrated Defense Systems,
362 Lowell Street,
Andover, MA 01810
e-mail: Thomas_E_Kazior@raytheon.com
362 Lowell Street,
Andover, MA 01810
e-mail: Thomas_E_Kazior@raytheon.com
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Thomas Kenny,
Thomas Kenny
Department of Mechanical Engineering,
Stanford University,
440 Escondido Mall,
Building 530 Room 223,
Stanford, CA 94305
e-mail: kenny@cdr.stanford.edu
Stanford University,
440 Escondido Mall,
Building 530 Room 223,
Stanford, CA 94305
e-mail: kenny@cdr.stanford.edu
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Dana Weinstein
Dana Weinstein
Department of Electrical and
Computer Engineering,
Purdue University,
BRK 2266,
465 Northwestern Avenue,
West Lafayette, IN 47907
e-mail: danaw@purdue.edu
Computer Engineering,
Purdue University,
BRK 2266,
465 Northwestern Avenue,
West Lafayette, IN 47907
e-mail: danaw@purdue.edu
Search for other works by this author on:
Gunjan Agarwal
Department of Mechanical Engineering,
École polytechnique fédérale de Lausanne,
MED 1 1017 (Batiment MED),
Station 9,
Lausanne 1015, Switzerland
e-mail: agarwalg@alum.mit.edu
École polytechnique fédérale de Lausanne,
MED 1 1017 (Batiment MED),
Station 9,
Lausanne 1015, Switzerland
e-mail: agarwalg@alum.mit.edu
Thomas Kazior
Raytheon Integrated Defense Systems,
362 Lowell Street,
Andover, MA 01810
e-mail: Thomas_E_Kazior@raytheon.com
362 Lowell Street,
Andover, MA 01810
e-mail: Thomas_E_Kazior@raytheon.com
Thomas Kenny
Department of Mechanical Engineering,
Stanford University,
440 Escondido Mall,
Building 530 Room 223,
Stanford, CA 94305
e-mail: kenny@cdr.stanford.edu
Stanford University,
440 Escondido Mall,
Building 530 Room 223,
Stanford, CA 94305
e-mail: kenny@cdr.stanford.edu
Dana Weinstein
Department of Electrical and
Computer Engineering,
Purdue University,
BRK 2266,
465 Northwestern Avenue,
West Lafayette, IN 47907
e-mail: danaw@purdue.edu
Computer Engineering,
Purdue University,
BRK 2266,
465 Northwestern Avenue,
West Lafayette, IN 47907
e-mail: danaw@purdue.edu
1Corresponding authors.
Contributed by the Electronic and Photonic Packaging Division of ASME for publication in the JOURNAL OF ELECTRONIC PACKAGING. Manuscript received June 14, 2016; final manuscript received October 25, 2016; published online November 10, 2016. Assoc. Editor: Mehdi Asheghi.
J. Electron. Packag. Mar 2017, 139(1): 011001 (11 pages)
Published Online: November 10, 2016
Article history
Received:
June 14, 2016
Revised:
October 25, 2016
Citation
Agarwal, G., Kazior, T., Kenny, T., and Weinstein, D. (November 10, 2016). "Modeling and Analysis for Thermal Management in Gallium Nitride HEMTs Using Microfluidic Cooling." ASME. J. Electron. Packag. March 2017; 139(1): 011001. https://doi.org/10.1115/1.4035064
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