Three-dimensional (3D) structure with through silicon via (TSV) technology is emerging as a key issue in microelectronic packaging industry, and electrical reliability has become one of the main technical subjects for the TSV designs. However, criteria used for TSV reliability tests have not been consistent in the literature, so that the criterion itself becomes a technical argument. To this end, this paper first performed several different reliability tests on the testing packaging with TSV chains, then statistically analyzed the experimental data with different failure criteria on resistance increasing, and finally constructed the Weibull failure curves with parameter extractions. After comparing the results, it is suggested that using different criteria may lead to the same failure mode on Weibull analyses, and 65% of failed devices are recommended as a suitable termination for reliability tests.
A Study on Electrical Reliability Criterion on Through Silicon Via Packaging
Chung-Cheng Institute of Technology,
National Defense University,
Tao-Yuan 335, Taiwan
Asia-Pacific Institute of Creativity,
Miao-Li 351, Taiwan
Contributed by the Electronic and Photonic Packaging Division of ASME for publication in the JOURNAL OF ELECTRONIC PACKAGING. Manuscript received August 16, 2015; final manuscript received February 25, 2016; published online March 23, 2016. Assoc. Editor: Seungbae Park.
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Lwo, B., Tseng, K., and Tseng, K. (March 23, 2016). "A Study on Electrical Reliability Criterion on Through Silicon Via Packaging." ASME. J. Electron. Packag. June 2016; 138(2): 024501. https://doi.org/10.1115/1.4032932
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