The temperature-dependent electrical properties of Ag Schottky contacts to differently grown O-polar bulk ZnO single crystals were comparatively investigated in the temperature range of 100–300 K. Schottky contact to hydrothermal ZnO produced the higher barrier heights (lower ideality factors) than that of pressurized melt-grown ZnO. The modified Richardson plots for two samples produced the larger Richardson constant compared to the theoretical value of 32 A cm−2 K−2 for n-type ZnO, indicating that the inhomogeneous barrier height with the thermionic emission (TE) model could not explain the current transport. The conductive accumulation layers on the ZnO surfaces might not be removed effectively for two samples, which degraded the rectifying characteristics. The different electron transport characteristics between hydrothermal and pressurized melt-grown ZnO could be explained by the different degree of Ag-O formation at the interface.
Temperature-Dependent Electrical Characteristics of Ag Schottky Contacts to Differently Grown O-Polar Bulk ZnO
Seoul National University of Science
Ewha Womans University,
Contributed by the Electronic and Photonic Packaging Division of ASME for publication in the Journal of Electronic Packaging. Manuscript received February 4, 2012; final manuscript received December 25, 2012; published online February 26, 2013. Assoc. Editor: Kyoung-sik Moon.
- Views Icon Views
- Share Icon Share
- Cite Icon Cite
- Search Site
Kim, H., Sohn, A., Cho, Y., and Kim, D. (February 26, 2013). "Temperature-Dependent Electrical Characteristics of Ag Schottky Contacts to Differently Grown O-Polar Bulk ZnO." ASME. J. Electron. Packag. March 2013; 135(1): 011010. https://doi.org/10.1115/1.4023404
Download citation file:
- Ris (Zotero)
- Reference Manager