Due to the carrier mobility changes with the mechanical loading and its small size, the MOSFET (metal-oxide-semiconductor field-effective-transistor) has the potential to be a suitable chip stress monitoring tool for microelectronic packaging. In this work, a complete and accurate approach to calibrate the coefficients for both types of MOSFET stress sensors under thermal and mechanical loadings was investigated quantitatively. Through data from different measurement modes on different types of MOSFET, the optimal experimental methodology was next proposed for the sensor applications on packaging stress extraction. The thermomechanical coupling coefficients for the selected experimental mode were finally extracted so that packaging stress measurements with MOSFET under elevated temperature can be performed more accurately.
Parameter Calibrations on MOSFET Stress Sensors
Chung-Cheng Institute of Technology,
Contributed by the Electronic and Photonic Packaging Division of ASME for publication in the JOURNAL OF ELECTRONIC PACKAGING. Manuscript received July 27, 2011; final manuscript received May 7, 2012; published online July 18, 2012. Assoc. Editor: Stephen McKeown.
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Tan, R., Chung, H., Lwo, B., Tang, C., and Tseng, K. (July 18, 2012). "Parameter Calibrations on MOSFET Stress Sensors." ASME. J. Electron. Packag. September 2012; 134(3): 031004. https://doi.org/10.1115/1.4006888
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