Rapid Thermal Characterization of the High Thermal Conductivity Film Layers by the Film-on Substrate Technique

Lack of an efficient thermal management strategy and system can often lead to overall system failure in advanced microprocessors. This can be avoided by utilization of the high thermal conductivity materials, as heat spreader/sink, in compact packaging systems. The diamondlike dielectric materials, such as diamond, silicon nitride $(Si3N4)$⁠, aluminum nitride $(AlN)$⁠, silicon carbide $(SiC)$⁠, etc., are the likely choices. However, thermal characterization of such high thermal conductivity materials has proven to be challenging due to variations in the fabrication processes and, therefore, their microstructures as well as the practical difficulties in measuring small temperature gradients during the characterization. In this paper, we will report on a novel film on substrate technique that can be used conveniently for repeated measurements of the lateral thermal conductivity of the high thermal conductivity film layers, with thicknesses between 100 and $500μm$⁠.