Silicon is the primary semiconductor material used to fabricate microchips. The quality of microchips depends directly on the quality of starting silicon wafers. A series of processes are required to manufacture high quality silicon wafers. Surface grinding is one of the processes used to flatten the wire-sawn wafers. A major issue in grinding of wire-sawn wafers is the reduction and elimination of wire-sawing induced waviness. Several approaches (namely, combination of grinding and lapping, reduced chuck vacuum, soft-pad, and wax mounting) have been proposed to address this issue. Finite element analysis modeling of these approaches was conducted and the results were published earlier. It was shown that soft-pad grinding was a very promising approach since it was very effective in reducing the waviness and very easily adopted to conventional grinding environment. This paper presents a study of finite element analysis on soft-pad grinding of wire-sawn silicon wafers, covering the mechanisms of waviness reduction and the effects of pad material properties.
Finite Element Analysis on Soft-Pad Grinding of Wire-Sawn Silicon Wafers
Contributed by the Electronic and Photonic Packaging Division for publication in the JOURNAL OF ELECTRONIC PACKAGING. Manuscript received February 2003; final revision, November 2003. Associate Editor: M. Saka.
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Xin, X. J., Pei, Z. J., and Liu, W. (July 8, 2004). "Finite Element Analysis on Soft-Pad Grinding of Wire-Sawn Silicon Wafers ." ASME. J. Electron. Packag. June 2004; 126(2): 177–185. https://doi.org/10.1115/1.1649243
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