The gold-gold thermocompression process for power heterostructure bipolar transistor (HBT) flip chip has been modelled and simulated by finite element method. A model for plated gold creep has been determined on the basis of empirical data and model comparison. This model seems suited for gold-gold thermocompression process optimization.

Issue Section:
Technical Papers
Keywords:
finite element analysis, flip-chip devices, lead bonding, power bipolar transistors, heterojunction bipolar transistors, gold
Topics:
Bonding, Creep, Finite element analysis, Flip-chip devices, Modeling, Optimization, Stress, Temperature, Transistors, Gallium arsenide, Flip-chip
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