The pressure sensor is one of the major applications of microelectromechanical systems (MEMS). An absolute pressure sensor utilizes anodic bonding to create a vacuum cavity between the silicon diaphragm and glass substrate. The manifold absolute pressure (MAP) sensing elements from a new supplier have exhibited negative voltage shifts after exposure to humidity. A hypothesis has been established that poor anodic bonding causes an angstrom-level gap between the silicon substrate and glass. Once moisture enters the gap in a vapor form and condenses as water droplets, surface tension can induce a piezoresistive stress effect that causes an unacceptable voltage shift. Finite element analyses were performed to simulate the phenomenon and the results correlated well with experimental observations.
Humidity-Induced Voltage Shift on MEMS Pressure Sensors
Contributed by the Electronic and Photonic Packaging Division for publication in the JOURNAL OF ELECTRONIC PACKAGING. Manuscript received May 2001; final revision, June 2003. Associate Editor: Y. C. Lee.
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Chiou, J. A., Chen , S., and Jiao, J. (December 15, 2003). "Humidity-Induced Voltage Shift on MEMS Pressure Sensors ." ASME. J. Electron. Packag. December 2003; 125(4): 470–474. doi: https://doi.org/10.1115/1.1615249
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