Stress measurements in microelectronic packaging through piezoresistive sensors take the advantage of both in-situ and nondestructive. In this study, test chips with both p-type and n-type piezoresistive stress sensors, as well as a heat source, were first designed, then manufactured by a commercialized foundry so that the uniformity of the test chips was expected. Both temperature and stress calibrations were next performed through a special designed MQFP (Metal Quad Flat Package) and four-point bending (4PB) structure, respectively. Measurements of stresses which are produced due to both manufacturing process and thermal effects on the test chips were finally executed, and approximately linear relationships were observed between stress and temperature as well as stress and input power. It is concluded that n-type piezoresistive stress sensors are able to extract stress in microelectronic packaging with good accuracy.
On the Study of Piezoresistive Stress Sensors for Microelectronic Packaging
Contributed by the Electronic and Photonic Packaging Division for publication in the JOURNAL OF ELECTRONIC PACKAGING. Manuscript received by the EPPD February 21, 2000. Associate Editor: B. Courtois.
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Lwo, B., Kao, C., Chen, T., and Chen, Y. (February 21, 2000). "On the Study of Piezoresistive Stress Sensors for Microelectronic Packaging ." ASME. J. Electron. Packag. March 2002; 124(1): 22–26. https://doi.org/10.1115/1.1414134
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