The finite element method was used to estimate the stresses in single level, 1 μm thick Cu-dielectric interconnect line arrays with Ta liners resulting from heating from 20°C to 400°C assuming that the structure was stress free at 20°C. Benzocyclobutene (BCB) and were chosen to represent typical polymer and ceramic dielectric materials being evaluated for Cu damascene interconnect structures. Experimentally observed Cu-Ta and Cu-Cu interfacial sliding was incorporated into the model using a 1 nm thick creep element that was calibrated to match the predictions of a classical diffusion-accommodated sliding model. The effect of Cu-Ta and Cu-Cu interfacial sliding was evaluated by comparing the relaxed and unrelaxed stresses. The effect of line width-to-thickness (w/t) ratio and Ta liner thickness on the shear, normal, and Ta liner-plane stresses at the Cu-Ta-dielectric interface was investigated because this interface is a likely failure site.
Finite Element Predictions of the Effect of Diffusion-Accommodated Interfacial Sliding on Thermal Stresses in Cu/Polymer Dielectric and Cu/Oxide Dielectric Single Level Damascene Interconnect Structures
Contributed by the Electronic and Photonic Packaging Division for publication in the JOURNAL OF ELECTRONIC PACKAGING. Manuscript received by the EPPD October 15, 2000; revised manuscript received March 8, 2001. Associate Editor: M. Shiratori.
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Kamsah , N., Gross , T. S., and Tsukrov, I. I. (March 8, 2001). "Finite Element Predictions of the Effect of Diffusion-Accommodated Interfacial Sliding on Thermal Stresses in Cu/Polymer Dielectric and Cu/Oxide Dielectric Single Level Damascene Interconnect Structures ." ASME. J. Electron. Packag. March 2002; 124(1): 12–21. https://doi.org/10.1115/1.1402629
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