In this part of the paper the drop test method is used to show that RTV dispersions are in fact plastic “false body” materials, and to determine the magnitudes of the residual yield stresses after shearing for different RTV dispersion lots. With the aid of the equation for the wall shear stress derived in Part I of this paper [1], a correlation equation between the residual yield stress and the deposition variables is obtained, and analysis is made of the drop spreading phenomenon. It is shown that the drop spread, which is responsible for the run-over, or wicking, of external leads of electronic circuits, can be decreased by decreasing the deposition rate of the encapsulant. Finally, a method is developed to determine the required deposition flow rate and deposition time to produce a drop having required final diameter and cured skin thickness.

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