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International Conference on Advanced Computer Theory and Engineering (ICACTE 2009)

Xie Yi
Xie Yi
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In this work a model is developed for the gate-cathode junction of a power thyristor containing an amplifying gate and emitter shorts. The geometry of this junction and the model parameters are defined and extracted according to a new methodology. The simulation results are compared with the measured results. It has been found that the developed model satisfactorily describes the performance of the gate-cathode junction of practical thyristors.

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