Intelligent Engineering Systems through Artificial Neural Networks, Volume 16
122 Neural Network Modeling in Nanotechnology: The Development of Nanostructures Produced by Molecular Beam Epitaxy for Infrared Applications
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InAs(GaSb)/AlGaAsSb devices are promising semiconductor nanosystems with signal generation and detection capabilities in the near-infrared (NIR) window of the electromagnetic spectrum. A major obstacle with synthesis of these devices is the ability to accurately achieve and control the broad range of composition and nanoscale features in complex, multi-layer structures. The sources of variance can be attributed to artifacts at the nanoscale of the device structure. Based on numerous experiments and neural network modeling techniques, our results reveal relationships between the growth parameters, material properties, and device performance parameters. These results can be used to evaluate the growth process and these complex nanostructures.