International Conference on Mechanical and Electrical Technology, 3rd, (ICMET-China 2011), Volumes 1–3
181 Characteristics of Nitrogen-Doped Antimony Telluride Thin Films for Phase-Change Random Access Memory
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The nitrogen-doped Sb2Te3 thin films with the variation of nitrogen concentration of 0–7% were prepared by radio-frequency (rf) magnetron sputtering method. Nitrogen doping effect on the electrical properties and structure of Sb2Te3 thin film was investigated. It was found that nitrogen doping significantly increases the crystallization temperature and resistivity of Sb2Te3 film. The root-mean-square (rms) roughness values of the films evaluated by atomic force microscopy (AFM) showed an obvious decrease with nitrogen doping. Compared with the conventional Ge2Sb2Te5 (GST) film, nitrogen-doped Sb2Te3 films exhibit lower melting temperature and more better data retention, which is beneficial to low power consumption applications of phase-change random access memory (PCRAM).