Skip to Main Content
ASME Press Select Proceedings

International Conference on Mechanical and Electrical Technology, 3rd, (ICMET-China 2011), Volumes 1–3

By
Yi Xie
Yi Xie
Search for other works by this author on:
ISBN:
9780791859810
No. of Pages:
906
Publisher:
ASME Press
Publication date:
2011

The large difference between speeds of fastest phototransistor (135 GHz) and hetero-junction bipolar transistor (710 GHz) has brought important problem and challenges in designing and manufacturing of fast phototransistor. This problem is more prominent in the microwave region. New approaches are required for recognition of existing problems in the known structures for phototransistor and introducing strategies to improve its performance. In this paper, using of convoluted resonator and waveguide structure in optical detector as well as optical waveguide as an appropriate solution for phototransistor scaling and performance improvements are suggested.

Abstract
Key Words
1 Introduction
2. Convoluted Photodetector
3. Scaling the Phototransistor
6. Modeling the Spectral Response
Summaries
References
This content is only available via PDF.
Close Modal
This Feature Is Available To Subscribers Only

Sign In or Create an Account

Close Modal
Close Modal