International Conference on Instrumentation, Measurement, Circuits and Systems (ICIMCS 2011)
121 Comparative Results of GaN and Si Mosfet in a ZVS Flyback Converter Using Multilayered Coreless Printed Circuit Board Step-Down Transformer
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The aim of this paper is to compare two different material MOSFETs performance namely GaN (Gallium Nitride) and conventional Si (Silicon) in Zero Voltage Switching (ZVS) flyback converter circuit with Coreless PCB step down transformers. The switching frequency of the regulated converter is in the range of 3.2–5MHz. In high frequency circuits, proper selection of MOSFETs is required in order to have low gate drive power consumption so that high energy efficiency of the converter can be achieved. Even though Si MOSFET has already known for its popularity in low to medium power converters and high frequency applications, GaN MOSFET device could produce better results. This can be done by reducing the total switching loss, conduction loss because of its lowand gate drive power consumption of the converter as a result of low gate charge, . From the experimental results, it can be observed that GaN MOSFET can produce higher energy savings including gate drive power by gaining approximately 8%-10% efficiency compared to its counterpart, Si MOSFET in a regulated 45-15V isolated DC-DC converter.