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ASME Press Select Proceedings
International Conference on Computer Engineering and Technology, 3rd (ICCET 2011)
ISBN:
9780791859735
No. of Pages:
970
Publisher:
ASME Press
Publication date:
2011
eBook Chapter
22 A New Power Gating Structure for Low Voltage Low Power MTCMOS Design
By
Sanjeev Rai
,
Sanjeev Rai
Department of Electronics and Communication Engineering,
Motilal Nehru National Institute of Technology
, Allahabad
, India
; [email protected]
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Prabhat Chandra Shrivastava
,
Prabhat Chandra Shrivastava
Department of Electrical and Electronics Engineering,
Northern India Engineering College
, Lucknow
, India
; [email protected]
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Muraleedhar Patro
,
Muraleedhar Patro
Department of Electronics and Communication Engineering,
Motilal Nehru National Institute of Technology
, Allahabad
, India
; [email protected]
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R. A. Mishra
,
R. A. Mishra
Department of Electronics and Communication Engineering,
Motilal Nehru National Institute of Technology
, Allahabad
, India
; [email protected]
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S. Tiwari
S. Tiwari
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Page Count:
6
-
Published:2011
Citation
Rai, S, Shrivastava, PC, Patro, M, Mishra, RA, & Tiwari, S. "A New Power Gating Structure for Low Voltage Low Power MTCMOS Design." International Conference on Computer Engineering and Technology, 3rd (ICCET 2011). Ed. Zhou, J. ASME Press, 2011.
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Scaling and power reduction trends in present technology causes sub threshold leakage currents to become an increasingly large component of total power dissipation. This paper presents Multi-threshold voltage technique for reducing standby power dissipation while still maintaining high performance in static and dynamic combinational logic blocks. Here 1-bit CMOS full adder taken as an example and implemented using MTCMOS technology and compared for the power and delay parameters using Cadence Virtuoso UMC 0.18µm. Further layout and RC parametric extraction has also been done using physical verification tool.
Abstract
Key Words
1. Introduction
2. Sources of Power Dissipation In Cmos Circuits
3. M Scaling Impact on Leakage Currents
4. Standby Leakage Current Reduction
5. Multi Threshold Voltage CMOS Technology
6. Conventional Full Adder
7. Simulation Results
8. Conclusion
References
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