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ASME Press Select Proceedings
International Conference on Computer and Automation Engineering, 4th (ICCAE 2012)
By
Jianhong Zhou
Jianhong Zhou
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ISBN:
9780791859940
No. of Pages:
460
Publisher:
ASME Press
Publication date:
2012

This article is on the CNTFET structure and to optimize power consumption and miniaturization of CNT based transistors as possible. The parameters of such structure and their impact on the on and off-current mode has been study to use in future construction of Low Operating Power circuits (LOP) , especially excitatory neurons in the brain cortex nerve (synthetic cortex). Our simulations implement in HSPICE environment and on the n - i - n CNTEFT. We have spice models to use CNTFET simulation [6].

Abstract
Keywords
1. Introduction
2. CNTFET Parameters Optimization
3. Scalin of Gate Length (LG)
4. The Effect of CNT Chirality (M,N)
5. The Effect of Gate Oxide Thickness (TOX)
6. The Effect of Gate Dielectric (K)
7. Excitatory Synapse Circuit
8. Summaries
References
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