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International Conference on Computer and Electrical Engineering 4th (ICCEE 2011)

Jianhong Zhou
Jianhong Zhou
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ASME Press
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So far, the research about nanodevice has been widely developed. In nanoelectronic structure, the tunnelling phenomenon is very important thing, especially how the electron tunnels through the potential barriers and its probability. This paper presents a numerical simulation of electron tunneling probability on 4-barrier (quadruple barrier) Si system focusing the applied bias effect on the tunneling probability on confinement model. The tunneling probability is calculated by solving the Schrodinger's equations through potential barrier using transfer matrix method. The simulation results show that the increase of applied bias causes a decrease of the peak tunnelling probability and to shift the discrete...

1 Introduction
2. Simulation Method
3. Results and Discussion
4. Summaries
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