89 Numerical Simulation of Tunneling Probability in Quadruple Barrier Si Confinement Model

So far, the research about nanodevice has been widely developed. In nanoelectronic structure, the tunnelling phenomenon is very important thing, especially how the electron tunnels through the potential barriers and its probability. This paper presents a numerical simulation of electron tunneling probability on 4-barrier (quadruple barrier) Si system focusing the applied bias effect on the tunneling probability on confinement model. The tunneling probability is calculated by solving the Schrodinger's equations through potential barrier using transfer matrix method. The simulation results show that the increase of applied bias causes a decrease of the peak tunnelling probability and to shift the discrete energy. We also investigate the tunnelling probability in the variety of device structure, and the simulation result shows that the position of one barrier with the difference barrier thickness is not influence the tunneling probability significantly. The simulation results also show the tunneling current profile of the device.