79 Fabrication of Silicon Carbide Photodiodes with Enhanced High-Temperature Performance by Electrochemical Anodization Technology

The electrochemical anodization technology was applied to enhance the high-temperature performance of the porous silicon carbide (SiC) p-n junction photodiode fabricated on a Si substrate. Higher photo-responsivity, lower dark current, and larger photo/dark current ratios at elevated temperatures were obtained for the devices developed with the anodization treatment. The mechanism of improvement on the device's high-temperature optoelectronic characteristics has been studied and it is found that the porous p/n SiC structures formed during the anodical process play a key role wherein.