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ASME Press Select Proceedings

International Conference on Computer and Electrical Engineering 4th (ICCEE 2011)

By
Jianhong Zhou
Jianhong Zhou
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ISBN:
9780791859841
No. of Pages:
698
Publisher:
ASME Press
Publication date:
2011

The electrochemical anodization technology was applied to enhance the high-temperature performance of the porous silicon carbide (SiC) p-n junction photodiode fabricated on a Si substrate. Higher photo-responsivity, lower dark current, and larger photo/dark current ratios at elevated temperatures were obtained for the devices developed with the anodization treatment. The mechanism of improvement on the device's high-temperature optoelectronic characteristics has been studied and it is found that the porous p/n SiC structures formed during the anodical process play a key role wherein.

Abstract
Key Words
1 Introduction
2. Device Fabrication
3 Results and Discussion
4. Summaries
References
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