... and results of void structure analysis by TEM. All methods yield the same order of magnitude for the stress-induced linear swelling. neutron irradiation swelling stress-induced swelling austenitic alloy DIN 1.4970 silicon titanium pressurized tube experiment microstructure Ralph HObner1and...

... A series of Fe-Cr-35Ni alloys was irradiated to doses ranging from 12 to 36 dpa with fast neutrons at 375–600°C and to 59–117 dpa at 675°C with Ni + ions. The primary purpose of this study was to examine the effect of silicon and titanium on both microstructural evolution and the tendency of Fe...

... metallic systems; Aluminum-Silicon Binary Alloys (10, 20, 30, and 50 wt% Si), A luminum-Silicon Carbide Metal Matrix Composites (MMCs) (10, 20, 30, and 55 volume% SiC) and other related materials, Binary Alloy Combinations of Al, Co, Cu, Fe, Ni, and Si, and Stainless Steels 304, 316, 347, CF8M, and 15-5 PH...

... The contribution of silicon starting material to device yield potential via gate oxide breakdown performance has grown in importance with the continually increasing levels of device gate area. Gate oxide integrity (GOI) testing is applied in silicon wafer manufacturing to determine the material...

... Gate oxide integrity (GOI) testing is a valuable tool for the characterization, development and optimization of tailor-made silicon (Si) substrates for the integrated circuits industry. Different Si substrates with various numbers of grown-in defects have been evaluated using charge-to-breakdown...

... their limitations when measuring epitaxial layer (epi) wafers or silicon on insulator (SOI) structures. In its conventional realization the SPV measurement is limited by the active layer thickness. On the other hand an epi layer grown on highly doped substrate typically does not generate high enough signal in a μ...

... The last segment of a four-part investigation on the influence of phosphorus and silicon on neutron-induced void swelling of austenitic stainless steels has been completed. This final segment explored the influence of these elements on the macroscopic swelling of developmental alloys irradiated...

... and minority carrier injection level is discussed. Concepts are stressed in the paper, with the necessary equations to clarify these concepts. Wherever possible, the concepts are augmented with experimental data, with particular emphasis on iron in silicon, because Fe is one of the most important impurities...

... The influence of transition metals on minority carrier diffusion length in silicon is discussed. It is shown that transition metals easily precipitate on silicon lattice microdefects. These precipitates can not be easily dissolved, which makes gettering procedure ineffective. This conclusion...

... The recombination lifetimes of silicon wafers were studied using microwave photo-conductivity decay( μ PCD) method with variable photo-injection function. For samples with surface inversion layers, the lifetimes increased as the injected carrier concentration decreased, and converged toward...

... The non-contact, non-destructive microwave photoconductivity decay (μ-PCD) technique is well established for the determination of effective carrier lifetimes in silicon material and a useful tool in monitoring different production steps. The measured lifetime is influenced by bulk and surface...

... Minority carrier recombination lifetime is one of the basic parameters that can provide information regarding the condition of the silicon substrate at various stages of the device manufacturing process. The key challenge is to effectively separate surface region effects from the bulk...

... A contamination experiment was carried to prove the possibility of a quantitative determination of the Fe-concentration in the high injection level region for p-type silicon. Calculation factors for two formulas were obtained, one assuming only FeB as life-time killer and another general one...

... contamination as well as those caused by Ni contamination remarkably shorten lifetime measured by MOS C-t. recombination lifetime generation lifetime micro wave photoconductive decay method surface photovoltage method MOS C-t method iron nickel copper silicon Morimasa Miyazaki INFLUENCE...

... Increasingly stringent demands are being placed on the surface and bulk metal contamination levels of silicon wafer starting material in order to meet ULSI device requirements. Recombination lifetime measurements are applied in silicon wafer manufacturing to monitor metal contamination from...

... Nine ASTM A588 low-alloy weathering steels representing three levels of silicon and nickel were prepared by induction melting and hot rolling in the laboratory. Corrosion tests were conducted for eleven years at four atmospheric sites which included industrial, rural, and marine locations...

... to changes in solute or solvent composition, displacement rate, and irradiation temperature. Fe-Cr-Ni alloys void swelling atomic size difference silicon molybdenum phosphorus neutron irradiation ion irradiation Frank. A. G a r n e r I, Thor L a u r i t z e n 2, and M a t t h e w A. M i t c h...

... on the macroscopic, microstructural, and atomic scales. These are taken from work on long- and short-range diffusion of hydrogen in amorphous alloys, grain-boundary sliding in metallic films, and point-defect reorientation in doped layers of silicon. New experimental approaches using the vibrating-membrane...

... greatly above this threshold, and a portion of the exposed particle population becomes completely oxidized. X-ray diffraction data confirm the appearance of α-Fe 2 O 3 in addition to the usual γ-Fe 2 O 3 following exposure to high humidities. Greater silicon content increases the threshold humidity...

... Reaction bonded silicon carbide (RB SiC) can be readily fabricated to near net shape and mirror blanks produced by this method can potentially be less costly than those fabricated by chemical vapor deposition (CVD). However, RB SiC is two phase, SiC and up to 30% silicon (Si), and can...