.... An increase in the oxidation rate of one pressure tube later in life could be correlated with evidence of greater open porosity, provided by the depth distributions of impurities, extending deep within the oxide layer. CANDU reactor pressure tubes oxidation deuterium ingress SEM/EDX XPS SIMS T...

... loading conditions and temperature dependence of the reaction layer formation. The contact areas were inspected by means of optical profilometry, scanning electron microscopy (SEM), and secondary ion mass spectrometry (SIMS) in order to determine type, thickness, homogeneity, and distribution...

... spectrometry (SIMS) are becoming more widely applicable to problems in the chemical analysis of coatings surfaces and interfaces. In this paper a brief review of instrumentation and theory allows projection of new capabilities for the method. Recent progress in the analysis of homopolymer and multicomponent...

... The techniques of chemical staining, spreading resistance, and secondary-ion mass spectrometry (SIMS) have been used in the determination of the depth of diffused and ion-implanted junctions in an effort to estimate the accuracy of the staining method. Computer simulations were also used...

... A “Load Line Calibration” (LLC) methodology for [0] in silicon determinations by SIMS is introduced. The LLC uses two (or more) p- silicon dice characterized by FTIR as calibration standards that are incorporated into each load of analytical samples. Repeated measurement of p- control samples...

... Secondary ion mass spectrometry (SIMS) and electron microscopy have been used to investigate the distribution of hydrogen and chlorine in SiO 2 films thermally grown on silicon. These films have been grown in various ambients, including pure O 2 , steam, HCl/O 2 , and Cl 2 /O 2 , as well as HCl...