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ASTM Selected Technical Papers
Recombination Lifetime Measurements in Silicon
By
D Gupta
D Gupta
1
Symposium chairman and co-editor
?
Mitsubishi Silicon America
?
Palo Alto, CA
Search for other works by this author on:
FR Backer
FR Backer
2
Symposium co-chairman and co-editor
?
Wacker Siltronic Corp.
?
Portland, OR
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W Hughes
W Hughes
3
Symposium co-chairman and co-editor
?
MEMC Electronics Materials Inc.
?
St. Peters, MO
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ISBN-10:
0-8031-2489-9
ISBN:
978-0-8031-2489-9
No. of Pages:
379
Publisher:
ASTM International
Publication date:
1998

A contamination experiment was carried to prove the possibility of a quantitative determination of the Fe-concentration in the high injection level region for p-type silicon. Calculation factors for two formulas were obtained, one assuming only FeB as life-time killer and another general one. A comparison between DLTS-, SPV- and μ-PCD-results showed a very good correlation of all instruments. Copper was proved to have also a strong influence on lifetime measurement, especially in n-type Silicon. Cu is suspected to affect the efficiency of Oxide passivation. Nitrogen also seemed to have a considerable influence at least in connection with a Cu contamination.

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